TShermodynamic modeling of silicon lpcvd revisited with kinetic data

摘要

Partial equilibrium chalculations simulating the knetically controlled low pressure chemical vapor deposition of silicon from silane are presented. The infleucne of kinetic parameters of the process is considered through the influence of kinetic parameters of the process is considered through the sticking coefficient ( sigma ) of the most reactive apecies. In order to simulate the formation of the film, sigma was taken into account in heterogeneous calculations either by reducing the quantities of the reactive species, or by modifying their thermodyamic data. The obtained composition of the gas phases is used to estimate its supersaturation and the driving force for the deposition of silicon.