Bias point dependence of the hot electron degradation ofAlGaAs/GaAs power HFETs

摘要

This work shows results of multi-bias-point DC hot electron stressof power AlGaAs/GaAs HFETs. Both the gate reverse current and thedrain-gate electric field are varied independently in order to study thebias dependence of device degradation. Numerical drift-diffusionsimulations are used to explain the degradation behavior