E-PHEMT for single supply, no drain switch, and high efficiencycellular telephone power amplifiers

摘要

Performance of a newly developed enhancement mode power PHEMTtechnology is demonstrated for single supply, no drain switch, highefficiency cellular telephone power amplifier applications. The E-PHEMTfeatures Idss=0.5 μA/mm, Imax=190 mA/mm, V_p=+0.3 V, Gm=340mS/mm, and Vbdg=20 V. When matched on-wafer for a compromise betweenpower and efficiency at 900 MHz, the E-PHEMT achieves Pout=100-140 mW/mmwith associated PAE=70 % at 3.2 V and Pout=35 mW/mm and PAE=71% at 1.5V. The new E-PHEMT has high gain, excellent efficiency under linear and1 dB compressed gain conditions, making it attractive for highefficiency linear power amplifiers. A 10 mm E-PHEMT achieves remarkablysimilar saturated power and efficiency performance over 0 to 400 mAquiescent bias current range, which allows low power dissipationoperation for high reliability