Batchless factory concept for very short cycle time semiconductormanufacturing

摘要

The focus of this paper is a processing concept that moves thethermal processing steps out of the semiconductor fabrication facility,dramatically simplifying the front end of line processing andfacilitating single wafer processing to potentially achieve a very shortmanufacturing process cycle time. In the batchless factory conceptwafers would be preprocessed before entering the semiconductor fab bygrowing gate oxide over the surface of the wafer followed by a blanketpoly-silicon gate deposition. Then, through the use of trench or fieldshield isolation, complementary MOS transistors could be built, isolatedand integrated without the need to grow isolation or gate oxides