Batchless factory concept for very short cycle time semiconductor manufacturing

摘要

The focus of this paper is a processing concept that moves the thermal processing steps out of the semiconductor fabrication facility, dramatically simplifying the front end of line processing and facilitating single wafer processing to potentially achieve a very short manufacturing process cycle time. In the batchless factory concept wafers would be preprocessed before entering the semiconductor fab by growing gate oxide over the surface of the wafer followed by a blanket poly-silicon gate deposition. Then, through the use of trench or field shield isolation, complementary MOS transistors could be built, isolated and integrated without the need to grow isolation or gate oxides.