首页> 外文会议>Electronic Components and Technology Conference, 1993. Proceedings., 43rd >Contact resistance degradation in z-axis connectors operated atburn-in temperatures
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Contact resistance degradation in z-axis connectors operated atburn-in temperatures

机译:z轴连接器在老化温度

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Elevated temperature tests were performed on molybdenum wirebutton z-axis socket assemblies in an effort to develop and qualify ahigh footprint density burn-in socket for pinless modules. Stress testswere performed at 200° C, with periodic mating and unmating of thesubstrate from the socket. These tests revealed that after 172 hours ofstress, the mean contact resistance increased by over an order ofmagnitude. Individual measurements of the stressed circuit board, socketand substrate revealed that the substrate contributed the majority ofthe observed resistance increase and that the degradation was due todiffusion and oxidation of the Cr/Cu/Ni/Au pad metallurgy on the pinlessceramic substrates. The resistance contributions of the socket andcircuit board pads were also analyzed and various wire button contactmetallurgies were evaluated in order to minimize their role in thedegradation. Overall, this work demonstrates the importance ofmaintaining the integrity of all metallurgical interfaces when usingz-axis interconnects at elevated temperatures
机译:在钼丝上进行高温测试 按钮z轴插座组件,以开发和鉴定 用于无针模块的高足迹密度老化插座。压力测试 在200°C下进行,并定期配对和取消配对 插座上的基材。这些测试表明,经过172小时的 应力,平均接触电阻增加了一个数量级 震级。单独测量受压电路板,插座 和底物显示底物贡献了大部分 观察到的电阻增加,并且退化是由于 Cr / Cu / Ni / Au垫冶金在无针脚上的扩散和氧化 陶瓷基板。插座的电阻贡献和 还分析了电路板焊盘以及各种电线按钮的接触 对冶金进行了评估,以最大程度地减少它们在冶金中的作用。 降解。总的来说,这项工作表明了 使用时保持所有冶金接口的完整性 高温下的Z轴互连

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