Fabrication of silicon-on-reflector for Si-basedresonant-cavity-enhanced photodetectors

摘要

A novel silicon-on-reflector substrate for Si-basedresonant-cavity-enhanced photodetectors has been fabricated by usingSi-based sol-gel and smart-cut techniques. The Si/SiO₂ Braggreflector is controlled in situ by electron beam evaporation and thethickness can be adjusted to get high reflectivity. The reflectancespectra of the silicon-on-reflector substrate with five pairs of Si/SiO₂ reflector have been measured and simulated by transfermatrix model. The reflectivity at operating wavelength is close to 100%.Based on the silicon-on-reflector substrate, SiGe/Si multiple quantumwells resonant-cavity-enhanced photodetectors for 1.3 μm wavelengthhave been designed and simulated. Ten-fold enhancement of the quantumefficiency of resonant-cavity-enhanced photodetectors compared withconventional photodetectors is predicted