Growth characterization of InxGa1-xAs/AlxGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure

摘要

This paper presents design and characterization of high performance multi-oxide 970nm InGaAs/AlGaAs MQWs vertical-cavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.