Abstract: A novel silicide phase Ir$-3$/Si$-4$/ suitable for medium wave infrared (MWIR, $lambda equals 3 micrometer $MIN 5 micrometer) detection was prepared and characterized. Iridium is deposited on p-Si(100) substrates at various temperatures in the range from 420 degrees Celsius to 485 degrees Celsius under ultrahigh vacuum conditions. The metallic phase is formed by interdiffusion and reaction of Ir and Si. The phase is identified to Ir$-3$/Si$-4$/ by Rutherford backscattering spectrometry. Ir$-3$/Si$-4$/ films thinner than 10 nm show Schottky barrier heights as low as $Phi$-Ph$/ equals 165 meV for photoemission into the Si valence band. Dark current densities are measured to j$-R$/ less than 1 $DOT 10$+$MIN@9$/ A cm$+$MIN@2$/ (at reverse bias 5 V and detector operation temperature 50 K). The infrared test detectors exhibit responsivities (lambda equals 4 micrometer) of up to 20 mA W$+$MIN@1$/ at 5 V. The temperature resolution of the test detectors - front illuminated and without antireflection coating and optical resonator - is improved to a noise equivalent temperature difference NETD$-300K$/ approximately equals 53 mK (at 50 Hz) compared to 75 mK of equivalent test detectors fabricated by common HV-PtSi deposition. !18
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机译：摘要：制备并表征了一种新型的硅化物相Ir $ -3 $ / Si $ -4 $ /，适用于中波红外检测（MWIR，$ lambda等于3微米$ MIN 5微米）。在超高真空条件下，铱以420摄氏度至485摄氏度的各种温度沉积在p-Si（100）衬底上。通过Ir和Si的相互扩散和反应形成金属相。卢瑟福背散射光谱法将该相鉴定为Ir $ -3 $ / Si $ -4 $ /。厚度小于10 nm的Ir $ -3 $ / Si $ -4 $ /薄膜显示肖特基势垒高度低至$ Phi $ -Ph $ /等于165 meV，可用于向Si价带进行光发射。暗电流密度的测量值为j $ -R $ /，小于1 $ DOT 10 $ + $ MIN @ 9 $ / A cm $ + $ MIN @ 2 $ /（在反向偏置5 V和检测器工作温度50 K的情况下）。红外测试检测器在5 V时的响应度（λ等于4微米）高达20 mA W $ + $ MIN @ 1 $ /。测试检测器的温度分辨率-正面照明，无防反射涂层和光学谐振器-得以改善噪声等效温度差NETD $ -300K $ /大约等于53 mK（在50 Hz时），而普通HV-PtSi沉积法制造的等效测试检测器为75 mK。 ！18
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