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Examination of develop puddle time and its effects on lithographic performance

机译:检查显影水坑时间及其对光刻性能的影响

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Abstract: As critical dimensions continue to shrink, the importance of robust process windows for these smaller features becomes increasingly evident. There are, seemingly, an unlimited number of variables involved in optimizing a photolithography process to maximize a photoresist and developer system's process window. One of the more influential variables is the develop process, and more specifically, the develop puddle time. The effect of develop puddle time on overall lithographic performance has been investigated. Three runs each were processed varying single spray puddle develop times from 10 seconds to 80 seconds. The responses include dose to clear (Eo), sizing energy (Es), masking linearity, resolution, under, over, and total exposure latitude, focus latitude, iso/dense bias, and resist profile. Also, suggested possible indicators of lithographic performance, such as, sizing ratio (Es/Et) and contrast (gamma) were observed. The effects of develop puddle time on lithographic performance, the `usable' develop puddle time range, and the viability of Es/Et Ratio and gamma as indicators of lithographic performance will be described. Based on the results, optimal puddle times are recommended for increased lithographic performance.!4
机译:摘要:随着关键尺寸的不断缩小,健壮的工艺窗口对于这些较小特征的重要性日益明显。看来,在优化光刻工艺以最大化光致抗蚀剂和显影剂系统的工艺窗口方面涉及无限多个变量。更具影响力的变量之一是开发过程,更具体地说是开发水坑时间。研究了显影时间对整体光刻性能的影响。每次处理三轮,将单次喷涂水坑的显影时间从10秒更改为80秒。响应包括清除剂量(Eo),施胶能量(Es),掩膜线性,分辨率,曝光不足,过度和总曝光范围,聚焦范围,等度/浓差和抗蚀剂分布图。另外,观察到了可能的光刻性能指标,例如上浆比(Es / Et)和对比度(γ)。将描述显影水坑时间对光刻性能的影响,“可用”显影水坑时间范围以及作为光刻性能指标的Es / Et比和gamma的可行性。根据结果​​,建议使用最佳熔池时间以提高光刻性能。!4

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