Noise measurements in charge-coupled devices

摘要

Measurements of the noise levels at the output of surface and bulk channel charge-coupled devices with three-phase overlapping polysilicon electrodes are presented. New schemes and input circuits for low-noise electrical insertion of the signal charge are discussed. Our measurements indicate that the noise levels due to the intrinsic noise sources (transfer and storage noise) agree with our physical understanding of the device operation. The noise levels due to the extrinsic sources (puiser noise and electrical insertion noise) are above the expected theoretical values.