Characterization of electronic devices by top-down Electron Beam Induced Current

摘要

In order to fully understand the full breadth of technology problems that may affect yield or performance in advanced technologies, junctions need to be characterized in greater detail. Rather than extensive lamella preparation, or serial cross-sectioning, a fresh approach is needed. Results showing EBIC analysis of SRAMs delayered to contact layer are provided. By probing different nodes of the SRAM cell at different beam landing energies, a wide variety of device phenomena may be explored. This technique can empower the rapid scanning of multiple cell blocks and catch details that passive voltage contrast at the contact level may miss. A table of results is provided.