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Monolithic Thin-Film Piezoelectric-on-Substrate Filters

机译:单片薄膜压电衬底过滤器

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This paper presents monolithic piezoelectric-on-substrate acoustic filters operating in a wide frequency range. Second order narrowband filters are realized by utilizing coupled resonance modes of a single microstructure. The substrate is selected from materials with high acoustic velocity and low acoustic loss (e.g. silicon) resulting in high Q resonant structures. The unique mechanical coupling technique employed in this work enables fabrication of narrow-band filters with a high out-of-band rejection in a small footprint. We demonstrate narrow-band filters suitable for channel-select applications in IF and RF bands. Filter Q values of 800 at 250MHz, 470 at 360MHz, and 400 at 3.5GHz for small footprint second-order filters are reported. The measured power handling of these devices is high due to the use of high energy density structural material, showing a 0.2dB compression point of >15dBm at 360MHz (limited by the measurement equipment).
机译:本文介绍了在宽频率范围内运行的单片压电上的基板声滤波器。通过利用单个微结构的耦合谐振模式来实现二阶窄带滤波器。基板选自具有高声速和低声损耗(例如硅)的材料,导致高Q谐振结构。本作业中采用的独特机械耦合技术使得能够在小占地面积中具有高带抑制的窄带过滤器。我们展示适用于IF和RF频带中的通道选择应用程序的窄带过滤器。报道了800尺寸为800的滤波器Q值,470,360MHz,400尺寸为3.5GHz,用于小型占地面积的二阶滤波器。由于使用高能密度结构材料,这些装置的测量功率处理高,显示在360MHz的0.2dB压缩点> 15ddbm(由测量设备限制)。

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