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Clock Tree Optimization of FPGA Semi-Custom Memory with SEU FlipFlops

机译:具有SEU触发器的FPGA半定制存储器的时钟树优化

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Flip-flops (FFs) and memory (including Block RAM and Configuration RAM) are the key elements in Field Programmable Gate Arrays (FPGA). A single radiation event can flip the storage node of the sequential elements. FPGAs are widely used in radiation environments such as space, the mitigation of single event upset (SEU) in SRAM based FPGAs is increasingly important. Generally, the SRAM macros implement well optimized in-built Error Correction Codes (ECC). For SEU tolerance, traditional FFs are replaced by SEU hardened FFs. SEU FFs have higher setup and clock-to-out delays and degrades the performance of SRAMs in FPGAs.High performance SRAMs in FPGAs are implemented using Hybrid approach of custom and PNR (Place and Route). FPGA applications demanding more features such as ability to form deeper memories, and the programmable word size etc. This leads to increase in the logic and wirelengths, which further introduces higher delays in designs and impacts performance.So, the optimal clock-distribution network in high density memories along with SEU tolerance features, is one of the key aspects of high-speed SoC designs. This paper demonstrates methods to implement high quality clock tree to mitigate delay penalties introduced by the SEU hardened FFs and higher wirelengths. Experimental results demonstrate that the proposed approach significantly improves clock tree performance.
机译:触发器(FF)和存储器(包括Block RAM和Configuration RAM)是现场可编程门阵列(FPGA)的关键元素。单个辐射事件可以翻转顺序元素的存储节点。 FPGA已广泛用于空间等辐射环境中,基于SRAM的FPGA中减轻单事件翻转(SEU)的重要性越来越重要。通常,SRAM宏会实现经过优化的内置错误校正码(ECC)。对于SEU公差,传统FF被SEU硬化FF取代。 SEU FF具有更高的设置和时钟到输出延迟,并降低了FPGA中SRAM的性能。FPGA中的高性能SRAM是使用定制和PNR(布局和布线)的混合方法实现的。 FPGA应用需要更多的功能,例如形成更深的存储器的能力以及可编程的字长等。这导致逻辑和线长的增加,这进一步导致了更高的设计延迟并影响了性能。高密度存储器以及SEU容限功能是高速SoC设计的关键方面之一。本文演示了实现高质量时钟树的方法,以减轻SEU硬化FF和更高线长引入的延迟惩罚。实验结果表明,该方法可以显着提高时钟树的性能。

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