Enhancing silicon carbide CoolSiC(TM) MOSFET 1200 V performance with improved D(exp 2)Pak package using diffusion-soldering die attach

摘要

This paper presents a new enhanced silicon carbide CoolSiC(TM) MOSFET 1200 V that makes use of the benefits of an improved D(exp 2)Pak (TO-263) 7-pin package using a diffusion-soldering die-attach process. The significant thermal performance improvement of the package, in combination with state-of-the-art silicon carbide trench MOSFET 1200 V technology, has resulted in an excellent surface-mounted CoolSiC(TM) MOSFET 1200 V device with lower power losses and stray inductance, thus lower operating junction temperatures in the application, and improved reliability. It also enables reduced system costs because of faster assembly, one of the well-known advantages of surface-mounted device (SMD) packages. In brief, the new device helps to fulfill the increasing demand for higher power density, lower cost, and higher reliability of modern industrial and consumer systems.