A 16K Current-Based 8T SRAM Compute-In-Memory Macro with Decoupled Read/Write and 1-5bit Column ADC

摘要

A novel 8T SRAM -based bitcell is proposed for current-based compute-in-memory dot-product operations. The proposed bitcell with two extra NMOS transistors (vs. standard 6T SRAM) decouples SRAM read and write operation. A 128×128 8T SRAM bitcell array is built for processing a vector-matrix multiplication (or parallel dot-products) with 64x binary (0 or 1) inputs, 64×128 binary (-1 or +1) weights, and 128x 1-5bit outputs. Each column (i.e. neuron) of the proposed SRAM compute-in-memory macro consists of 64x bitcells for dot-product, 32x bitcells for ADC, and 32x bitcells for calibration. The column-based neuron minimizes the ADC overhead by reusing a sense amplifier for SRAM read. The column-wise ADC converts the analog dot-product results to N-bit output codes (N=1 to 5) by sweeping reference levels using replica bitcells for 2N-1 cycles for each conversion. Monte-Carlo simulations and test-chip measurement results have verified both linearity and process variation. The largest variation (σ=2.48%) results in the MNIST classification accuracy of 96.2% (i.e. 0.4% lower than a baseline with no variation). A test-chip is fabricated using 65nm, and the 16K SRAM bitcell array occupies 0.055mm². The energy efficiency of the 1bit operation is 490-to-15.8TOPS/W at 1-5bit ADC mode using 0.45/0.8V core supply and 200MHz.