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A Novel Multi-Physical Coupled Model of Press-Pack IGBT in Steady Conducting State Considering Fretting Wear

机译:考虑微动磨损的稳态导压封装IGBT多物理场耦合模型

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The finite element model of press-pack IGBT (PPI) in steady conducting state is significant for its reliability improvement research. The models in the previous literature are not able to realize the fully coupled relationship in the consideration of device aging status and the chip surface roughness. In this paper, a novel multi-physical filed coupled model of PPI considering fretting wear is proposed. This model realizes the coupled of the electrical, thermal and mechanical model through contact resistance. The influence of contact pressure is not necessary to be taken into consideration in the coupled model so that contact resistance only determinates by the surface roughness. Under the utilization of the empirical formula of the contact thermal and electrical resistance in the multi-physical filed coupled model, it is more correct to obtain the junction temperature and pressure distribution under various surface roughness. The observed cracks and the fretting wear phenomenon on the chip surface after power cycling test verify the correctness of the coupled model. The proposed model is meaningful in researching the reliability improvement of PPI.
机译:压装式IGBT(PPI)稳态导通状态的有限元模型对其可靠性改进研究具有重要意义。考虑到器件老化状态和芯片表面粗糙度,先前文献中的模型无法实现完全耦合关系。本文提出了一种考虑微动磨损的新型PPI多物理场耦合模型。该模型通过接触电阻实现电,热和机械模型的耦合。在耦合模型中不必考虑接触压力的影响,因此接触电阻仅由表面粗糙度决定。在多物理场耦合模型中利用接触热和电阻的经验公式,获得在各种表面粗糙度下的结温和压力分布更为正确。通电循环测试后,在芯片表面观察到的裂纹和微动磨损现象证明了耦合模型的正确性。该模型对研究PPI的可靠性提高具有重要意义。

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