First-Principle Study of Spin Transport in GaAs-Adenine-GaAs Semi-Conductor Tunnel Junction

摘要

The spin transport phenomenon in Adenine based semi-conducting tunnel junction using GaAs semiconductor nano ribbon electrodes has been reported using Density Functional Theory (DFT) and Non Equilibrium Green’s Function (NEGF) based formalisms. First principle approach has been used to simulate and investigate the effects of semiconductor contact tunnelling resistance at low bias voltage. This experiment has been carried out at room temperature. It is observed that Tunnelling Contact Resistance remains high (~100 %) at higher bias voltage. The quantum-ballistic transmission obtained for parallel configuration is large enough comparing with anti parallel configuration of this analytical model representation of the nano structured device. The current-voltage characteristics reflect that the investigated spin current is significantly larger for parallel configuration when compared with the spin current which is acquired for anti-parallel configuration. Perfect quantum-ballistic spintransportation effect is obtained for this GaAsAdenine-GaAs semi-conductor tunnel junction structure.