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A Robust Code for MBU Correction Till 5-Bit Error

机译:鲁棒的MBU校正直到5位错误

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摘要

Memory is a component, playing a significant role in electronic systems. The use of static random access memories (SRAMs) is increasing in multimedia and system on chip applications. The key challenge faced by SRAMs is soft errors induced by the radiation that cause the change of values in memory cells. Error correction codes (ECCs) are used to face this challenge. As the technology is scaling down the chances of multiple bit upsets(MBUs) is increasing. So ECCs with higher correction ability are needed. Many ECCs have been proposed to face the challenge of MBUs. Some of them are SEC-DED codes, QAEC codes, FUEC-QUAEC codes. In this paper, we are presenting ECCs that has same redundancy as recently proposed FUEC-QUAEC codes [1] and can correct all the errors till 5-bit adjacent error. The procedure for encoding and decoding of proposed codes is presented. The encoder and decoder have been implemented using 45nm library and compared with QAEC codes, showing that proposed codes have better error correction capability with moderate delay over head and low power consumption than OAEC codes.
机译:内存是一个组成部分,在电子系统中起着重要的作用。在多媒体和片上系统应用中,静态随机存取存储器(SRAM)的使用正在增加。 SRAM面临的主要挑战是由辐射引起的软错误,这些错误会导致存储单元中的值发生变化。纠错码(ECC)用于应对这一挑战。随着技术的缩减,出现多个位翻转(MBU)的机会也在增加。因此,需要具有更高校正能力的ECC。已经提出了许多ECC来面对MBU的挑战。其中一些是SEC-DED码,QAEC码,FUEC-QUAEC码。在本文中,我们提出的ECC具有与最近提出的FUEC-QUAEC码[1]相同的冗余度,并且可以纠正所有错误,直到5位相邻错误为止。提出了对建议代码进行编码和解码的过程。编码器和解码器已使用45nm库实现,并与QAEC代码进行了比较,表明与OAEC代码相比,所提出的代码具有更好的纠错能力,且具有适度的开销延迟和低功耗。

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