Design of High Gain Operational Transconductance Amplifiers in 180 nm CMOS technology

摘要

This paper presents two architectures of two-stage Operational Transconductance Amplifiers (OTAs). To achieve high gain, folded cascode topology is used. The first architecture uses an external bias which can be controlled independent of the OTA gain and bandwidth, while the second architecture uses a self-bias which reduces the power dissipation at the expense of restricted control over gain and bandwidth tuning. The two topologies are implemented using UMC 180 nm CMOS 1P9M technology. Both the architectures provide higher gain and consume less power in comparison to the previously published results.