首页> 外文会议>IEEE MTT-S International Microwave Symposium >High Gain Fully-Integrated Broadband Differential LNAs in 0.15-μm GaAs pHEMT Process Using R-L-C Feedback Gain Compensation for Radio Astronomical Receiver
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High Gain Fully-Integrated Broadband Differential LNAs in 0.15-μm GaAs pHEMT Process Using R-L-C Feedback Gain Compensation for Radio Astronomical Receiver

机译:使用R-L-C反馈增益补偿的射电天文接收机,在0.15μmGaAs pHEMT工艺中实现高增益全集成宽带差分LNA

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This paper presents two fully-integrated broadband, high-gain MMIC low noise amplifiers (LNAs) with differential input and single-ended output for Square Kilometre Array (SKA) astronomical receiver. This amplifier was implemented using 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The R-L-C feedback is applied for broadband design, and the fully on chip LC balun is introduced behind the first-stage in LNA1 and the third-stage in LNA2, respectively. The 3-dB bandwidth of the LNA1 covers from 2.7 to 5.7 GHz and LNA2 covers from 4.3 to 16.3 GHz. The measurement results demonstrate small signal peak gain 31.7/35.4 dB, average in-band noise figure of 0.92/1.05 dB with DC power consumption of 48/90 mW. The chip area of both the amplifiers is 2.5 × 2 mm2.
机译:本文介绍了两个完全集成的宽带,高增益MMIC低噪声放大器(LNA),它们具有差分输入和单端输出,用于平方公里阵列(SKA)天文接收机。该放大器是使用0.15-μmGaAs伪形高电子迁移率晶体管(pHEMT)工艺实现的。 R-L-C反馈用于宽带设计,全芯片LC不平衡变压器分别在LNA1的第一级和LNA2的第三级之后引入。 LNA1的3 dB带宽覆盖2.7至5.7 GHz,LNA2覆盖4.3至16.3 GHz。测量结果表明,小信号峰值增益为31.7 / 35.4 dB,平均带内噪声系数为0.92 / 1.05 dB,直流功耗为48/90 mW。两个放大器的芯片面积均为2.5×2 mm 2

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