185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38 peak PAE at 44GHz and Chip Area of 276 x 672 μm²

摘要

We report a 250 nm InP HBT MMIC that demonstrates record output power at 44 GHz for its chip size, having a small signal bandwidth of 25 - 50 GHz, and operating from a 2.5-2.8 V supply. The reported power amplifier delivers up to 185 mW and has a peak PAE of 38% at 44 GHz. The results in this work highlight the relevance of 250 nm InP HBT devices for emerging size-constrained platforms including MIMO communication front-ends and radar applications.