High Power Density Oscillation Free 1800A/3300V E2 IGBT Module with TMOS+ IGBT and PIC FRD Technology

摘要

An oscillation free 1800A/3300V E2 IGBT module with Enhanced Trench Metal Oxide Semiconductor (TMOS+) IGBT and P-doped Island of Cathode (PIC) FRD is presented. For IGBT, The dummy P well and dummy trench structures are carefully designed to enhance the electron injection and tailor the turn on&off dI/dt and dV/dt performance, together with the optimized buffer, achieving over 10% and 30% reduction on VCE(ON) and EOFF respectively comparing with last generation planar gate IGBT. For FRD, the backside photolithography technology is developed. As a result, the oscillation during reverse recovery under high voltage and small current is successfully suppressed while the VF~EREC trade-off relationship is improved more than 30%.