Interconnection Technology for 10 kV SiC Power Module

摘要

High power electronics is the key technology to build the next generation of the electrical power system. New wide band-gap material with substantial application benefit will need some time to enter the high power market. The substantial improvement of conventional silicon (Si) devices with junction temperature reaching levels from 150 °C to 200 °C and voltage levels up to 10 kV will first impact high power electronics. The aim of this works is to present design principles, dielectric measurements and electrical characteristics of a 10 kV SiC prototype obtained by the use of new assembly.