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MDmesh™ DM6: The latest Super-junction MOSFET technology with improved fast recovery diode

机译:MDmesh™DM6:最新的超结MOSFET技术,具有改进的快速恢复二极管

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ST's new MDmesh(TM) DM6 series from the STPOWER(TM) family is based on the latest high-voltage super-junction MOSFET technology with an integrated fast recovery body diode, and is principally targeted at the high-power SMPS market for server and telecom applications, as well as the HEV market for OBC (on-board chargers) and charging stations. This paper analyses certain features of the MDmesh(TM) DM6 series that render it suitable for both soft and hard switching applications, thanks to their very low reverse recovery charge (Qrr) that improves performance in resonant switching topologies, where hard switching on a conducting body diode can occur. We also compare this new super-junction MOSFET series with our previous MDmesh(TM) DM2 series and competitor devices.
机译:ST的新MDMESH(TM)DM6系列来自STPower(TM)家族基于具有集成快速恢复体二极管的最新高压超接线MOSFET技术,主要针对服务器的大功率SMPS市场。电信应用以及欧博尔(载机充电器)和充电站的HEV市场。本文分析了MDMESH(TM)DM6系列的某些特点,它适用于软硬开关应用,这归功于其非常低的反向恢复充电(QRR),可提高谐振切换拓扑的性能,其中硬于导通体二极管可能发生。我们还使用我们之前的MDMESH(TM)DM2系列和竞争对手器件进行比较这款新的超结MOSFET系列。

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