Back-Illuminated 2.74μm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e- Saturation Signal

摘要

A 3208×2184 global shutter image sensor with back-illuminated architecture is implemented in a 90 nm/65 nm imaging process. The sensor, having 2.74 μm-pitch-pixels, achieves 10000 electrons full-well capacity and -80 dB parasitic light sensitivity. Furthermore, 13.8 e-/s dark current at 60°C and 1.85 erms random noise are obtained. In this paper, the structure of a pixel with memory along with saturation enhancement technology is described.