Simulation of Microwave Circuit with PIN Diode by Field-Circuit Co-simulation

摘要

The discontinuous Galerkin time domain (DGTD) method and equivalent physical model are adopted to simulation microwave circuit with PIN diode. Compared with the existing field-circuit co-simulation method, the proposed method inherits the advantages of DGTD method. The final EM-circuit system equation is only related to the element connected with the circuit network. So only a small nonlinear equation stem from the equivalent physical model of PIN diode is solved at each time step. Numerical examples are given to demonstrate the capability of the proposed method.