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A 10-GS/s 8-bit SiGe ADC with Isolated 4×4 Analog Input Multiplexer

机译:具有隔离式4×4模拟输入多路复用器的10-GS / s 8位SiGe ADC

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In this paper, a time-interleaved 10GS/s 8bit ADC fabricated in 0.18μm SiGe BiCMOS technology has been demonstrated. The proposed 4×4 input multiplexer allows the ADC to support 1/2/4-channel sampling modes with no compromised isolation and input bandwidth. In the THA stage, a switched emitter follower (SEF) topology with delayed dummy clock is introduced to minimize the output overshot effect of the SEF. The measurement result shows that the ADC has a SFDR >43dBc over the entire Nyquist frequency. It has an effective number of bits (ENOB) about 6.6 at low frequency and dropping to 5.5 at 5GHz.
机译:本文证明了采用0.18μmSiGe BiCMOS技术制造的时间交错10GS / s 8位ADC。拟议中的4×4输入多路复用器允许ADC支持1/2/4通道采样模式,而不会影响隔离度和输入带宽。在THA阶段,引入了具有延迟虚拟时钟的开关发射极跟随器(SEF)拓扑,以最大程度地减小SEF的输出过冲效应。测量结果表明,在整个奈奎斯特频率上,ADC的SFDR> 43dBc。在低频时,它的有效位数(ENOB)约为6.6,而在5GHz时,有效位数降至5.5。

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