【24h】

ACWB: Access-Characteristic Write Buffer Management Scheme for Flash Memory

机译:ACWB:闪存的访问特性写缓冲区管理方案

获取原文

摘要

Compared with traditional hard disk drives (HDD), solid state drives (SDD) have distinct characteristics, such as efficient continuous access and random reading capability. Using of SSD is greatly limited due to the out-of-place update and endurance problem. Many flash-aware buffer schemes have been proposed to reduce write and erase operations. However, a good buffer management scheme should reduce the effects of random writes and suit access patterns. In this paper, we propose an access characteristic write buffer management scheme (ACWB) on flash memory that integrates write buffer and cost regulation based on access characteristic. Experimental results show that ACWB increases the response time by 35%, reduces erase times by 25%, and improves the hit ratio by 27% on the average compared with current flash-aware write buffer schemes.
机译:与传统硬盘驱动器(HDD)相比,固态驱动器(SDD)具有鲜明的特征,例如有效的连续访问和随机读取功能。由于不适当的更新和耐用性问题,极大限制了SSD的使用。已经提出了许多闪存感知缓冲器方案以减少写和擦除操作。但是,良好的缓冲区管理方案应减少随机写入的影响并适合访问模式。在本文中,我们提出了一种在闪存上的访问特性写缓冲区管理方案(ACWB),该方案将写缓冲区和基于访问特性的成本调节集成在一起。实验结果表明,与当前的闪存感知写缓冲区方案相比,ACWB的响应时间增加了35%,擦除时间减少了25%,命中率平均提高了27%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号