65nm Node Possibility Study in 200mm FABS

摘要

As for the fierce competition, how to improve wafer ASP(Average Sales Price) is key issue for both 200mm/300mm FABs. The possibly to transfer low value technology node as 65-90nm from 300mm FABs to 200mm FABs become more and more attractive. It can help 300mm FABs to release capacity for high value product and 200mm FABs to extend their lifetime and profit margin.In normal understanding, 90nm node and below is very difficult to 200mm FABs due to low k1 limitation on DUV scanners [ref.1-2]. Complex RET technologies are needed and its cost are not acceptable in 200mm FABs. HH-Grace, which is the top 200mm FABs in world-wide, focus on this issue as long time. We had got some new solutions and release HH-Grace 90nm node in FAB1 [ref.3-6]. It is the one of the best record for mass production with pure DUV scanners.But when the design rule shrinks from 90nm to 65nm, DUV scanner limitation is obviously and no effective method can be used. Fortunately, scanner vendors have some options for it. High NA DUV scanners and low NA ArF scanners are introduced for 200mm FABs[ref.7-8]. When we apply our solutions in DUV scanners on these new equipment, we can found sub-90nm node pattern can be printed as good quality.This paper will introduce the challenges of the sub-90nm technology lithography process. We will discuss some critical layer's lithography process based on a Low NA ArF tool(max NA=0.75). The process window, OPC and its issues are discussed based on 65nm node.