Design of Polysilicon-Gate DDSCR Device For RF Chip’s ESD Protection Based on 0.18μm BCD Process

摘要

A polysilicon-gate dual direction silicon-controlled rectifier device (PGDDSCR) is proposed for the research of on-chip integrated protection of RF communication system with dual direction SCR. It is validated using the 0.18-μm standard BCD(BiCMOS/CMOS/DMOS) process and is used for electrostatic discharge (ESD) protection of RF communications. The HBM level of the device is estimated based on the results of the transmission line pulse test. The human body model (HBM) of the PGDDSCR device is 4.5 KV, the breakdown voltage and the failure current are 21.1 V and 3 A, respectively. Due to the short-circuiting of the polysilicon gate of the anode (cathode), the PGDDSCR device generates an electric field effect to promote the positive feedback effect of the SCR, achieving the level of protection required by the target system. And because the area of the ESD device is small, the parasitic capacitance present does not affect the signal integrity of the RF communication system.