Design of Ku-band monolithic integrated power amplifier with analog predistorter

摘要

This work presents the design of a integrated power amplifier with a built-in analog predistorter. The amplifier is based on 0.25um GaAs pHEMT process. The power amplifier adopts a two-stage common source structure, and an analog predistorter is added between the stages to improve the linearity of the power amplifier. The analog predistorter has a simple structure, low insertion loss and high integration, which is suitable for on-chip integration. The gain of amplifier is greater than 25dB in 16-18GHz. The IMD3 can achieve a maximum improvement of 30dB near the saturation power back-off of 3dB.