Stochastic modelling of hopping charge carrier transport mechanism in organic photovoltaic structures

摘要

This paper presents Monte Carlo simulations of the time-of-flight measurement for a unidimensional lattice of an organic semiconductor sample, under Gaussian Disorder Model assumptions, in which charge carriers follow a hopping transport mechanism. Mobilities for different values of the applied electric field have been computed, and the power conversion efficiency of the sample is determined as a function of the electric field. With the extracted data, it is shown that there is an optimal field value at which high mobility and efficiency can be obtained..