Triple Gate SOI MOSFET

摘要

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) had been one of the best devices designed for integrated circuits over the decades. Due to continuous downscaling of the transistor the short-channel effects comes into play and further scaling becomes difficult. So, Multi-gate devices have been proposed so as to reduce these effects. Analytical modeling of Tri-gate MOSFET by solving Poisson's equation and necessary boundary condition is proposed in this paper. Surface potential for Tri-gate SOI MOSFET has been obtained and the effects of the device parameters like oxide thickness, different oxide material, channel length, gate voltage and drain voltage are plotted using MATLAB simulator.