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Modern Advancements and Application of GaN-Based Materials

机译:赣术材料的现代进展与应用

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GaN materials have found a large hole to fix in the world today. Keeping an eye over its variable bandgap and high-density electrons. Optoelectronic devices are now on their peak with its high stability and high electron carrying property. Starting with LED GaN has shown significant development in its application with outside world. Red LEDs were difficult and expensive before the entrance of GaN LEDs by giving us the option to choose substrate that makes GaN materials more flexible and reliable. Scientists today are working on the ways to avoid natural defects like quantum confined stark effect and black barrier effect associated with buffer layer. Amplifiers that use GaN technology are now available and give us better performance than the conventional ones. Other applications such as radars and nanomaterials are extensively investigated for correction of defects and improvement of quality. Wireless communications are being improved with GaN and its substrates. With the help of GaN today we can pinpoint locations with near-perfect accuracy and save power loss in conversions. Although we may have improved our quality, mass production is still a long way because of expensive materials. Work is going on to bring down the price and make it ready for commercial purposes and help humans as soon as possible in the near future.
机译:Gan材料在今天发现了一个大洞。在其可变带隙和高密度电子中保持一眼。光电器件现在具有高稳定性和高电子携带性能的峰值。从LED GaN开始显示其与外界的应用中的显着发展。在GaN LED的入口之前,红色LED难以昂贵,并通过选择使GAN材料更加灵活可靠的基板。今天的科学家正在努力避免像量子被限制的自然缺陷的方式避免与缓冲层相关的普通狭窄的斑点效应和黑色屏障效果。现在可用使用GaN技术的放大器,并提供比传统方式更好的性能。广泛研究其他诸如雷达和纳米材料的应用,以便纠正质量的缺陷和提高。 GaN及其基板正在改善无线通信。借助GaN的帮助,我们可以针对近乎完美的准确性定位位置,并在转换中节省功耗。虽然我们可能提高了我们的质量,但由于昂贵的材料,批量生产仍然很长。工作正在进行中,以降低价格,并准备好在不久的将来尽快帮助人类。

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