CCD-based thermoreflectance imaging of high-power diode lasers with back-irradiance

摘要

The two-dimensional (2D) temperature profile of a high-power junction-down broad-area diode laser facet subject to back-irradiance (BI) is studied via CCD-based thermoreflectance (TR) imaging and finite element modeling. The temperature rise in the active region (△T_(Ar)) is determined at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations. Interestingly, our study shows that △T_(AR) rises sharpest not when the back-irradiance is boresight-aligned with the active region but rather when it is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). At this critical location, △T_(AR) is found to increase by nearly a factor of three compared to its increase without back-irradiance. This provides insight on an important location for back-irradiance that may be correlated with catastrophic optical damage (COD) for diode lasers fabricated on absorbing substrates, and also suggests a thermal basis for truncated lifetime and degraded performance for diode lasers experiencing back-irradiance.