Raman Investigation of Critical Steps in Monolayer Graphene Transfer Form Copper Substrate to Oxidized Silicon by Means of Electrochemical Delamination

摘要

In this paper we present the results of the investigation by Raman spectroscopy of the monolayer graphene transfer on oxidized silicon substrates by highlighting the critical steps of the transfer using electrochemical delamination method. Characteristic Raman bands of graphene (D, G and 2D) are certifying if a transfer step has been performed successfully. The final step of Polymethyl methacrylate (PMMA) removal is the most critical one due to the partially folding of graphene. After transfer defects are induced in graphene which is confirmed by the increase of the ratio of the intensity of the D band to the G (I_D/I_G).