A Highly Efficient GaN E–HEMT/SiC Schottky Diode Power Device Based DC–DC ZETA Converter

摘要

The need for reliable and high performance dc–dc power converters is in high demand by many applications. This paper presents the design of a highly efficient dc–dc ZETA converter using a GaN E–HEMT/SiC Schottky diode power device for high step–up applications. In order to assess the effectiveness of the designed converter, its performance is comprehensively compared to a converter with a Si MOSFET/SiC Schottky diode. An evaluation is carried out of the switching performance of the Si MOSFET and GaN E–HEMT power devices within the converter. The total power loss of the converter and its efficiency is analyzed under different switching frequencies of the power devices. The analysis is also concentrated on evaluation of the capability of the designed converter to work efficiently at different input voltages, load currents, and output powers. The results show that an excellent performance and highest efficiency are gained from the GaN E–HEMT/SiC Schottky diode based converter.