A High-Density Low-Isolation-Capacitance Multi-Channel GaN Power Supply for Gate Drivers of 10 kV, 240 A SiC MOSFET Modules

摘要

This paper presents a power supply that suppliesmultiple gate drivers for 10 kV Silicon Carbide (SiC) metaloxidesemiconductor field-effect transistors (MOSFETs)modules. This power supply adopts a transformer configurationof single turn at the primary side, in order to avoid high-voltage(HV) creepage requirement and to achieve high power density.GaN-based LCCL–LC resonant converter has been selected,featuring zero-voltage switching (ZVS), current sourcecharacteristics, and fault ride-through capability. A completeconverter design approach has been developed for efficiency andinput-output capacitance (C_(I/O)) optimization. Experimentalresults shows 1.52 pF C_(I/O), constant output voltage, ZVS atvariable load conditions, and 75% maximum efficiency.