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Polarization-resolved quantification of bulk and surface contributions to second-harmonic generation in AIGaAs

机译:极化和极化对AIGaAs中二次谐波产生的体积和表面贡献的量化

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We demonstrate that bulk and surface contribution to the second-harmonic generation (SHG) in semiconductor material AIGaAs can be efficiently separated by the polarization-resolved determination of second-harmonic signal from plane layer of AIGaAs when illuminated by the tightly-focused linearly-polarized Gaussian beam. Introduction.
机译:我们证明,当由紧密聚焦的线性偏振照明时,可以通过对来自AIGaAs平面层的二次谐波信号进行极化分解确定,来有效地分离出半导体材料AIGaAs中对二次谐波产生(SHG)的体积和表面贡献高斯光束。介绍。

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