Accurate trimming of ion-implanted silicon photonic devices with Real-time monitoring and gradient feedback

摘要

We demonstrate a highly accurate trimming method combining laser annealing of germanium (Ge) implanted silicon waveguide and real-time monitoring of device performance. Direct feedback of the trimming process is facilitated by a differential technique based on ultrafast photomodulation. The resonant wavelength trimming accuracy is better than 0.15 nm for ring resonators with 20-mm radius.