Influence of Plasmochemical Modification of a Surface on Field Emission of Electrons of the Nanostructured Silicon Cathodic Matrixes

摘要

Regularities of changes of morphological and field emission characteristics of superficially structured silicon plates of electronic type of conductivity received with use of etching of natural oxides of silicon in fluorocarbon plasma and ion-physical dispersion in argon plasma are investigated. It is shown that superficial structuring with use of carbon subnanodimensional mask coverings allows to receive the set field emission currents at various tensions of external electric fields. In relation to the received field emission structures the physical and chemical model of two-level tunneling of electrons is considered. Scientific interpretation of the mechanism of destruction of the many apex silicon cathodic matrixes received with use of plasma processing in various chemically active gas environments is offered.