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Switching properties of fast-pulse driven spin-valve devices

机译:快速脉冲驱动旋转阀装置的切换性能

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Sub-micrometer spin-valve devices exhibit two stable states, and are candidates for MRAM applications. We have investigated switching in spin-valve devices in response to a single magnetic field pulse whose duration was varied from 250ps to 10 ns. The write-field pulses are oriented in the easy axis, along the long direction of the device. As the write-field pulse duration is decreased, the pulse amplitude required for switching the device increases. For several pulse widths and amplitudes above the switching threshold, we have observed the device switching into metastable states.
机译:亚微米旋转阀装置具有两个稳定状态,并且是MRAM应用的候选者。我们已经研究了旋转阀装置的切换,响应于持续时间从250ps变化到10 ns的单个磁场脉冲。写区域脉冲沿着设备的长方向沿容易轴定向。随着写区域脉冲持续时间减小,切换设备所需的脉冲幅度增加。对于若干脉冲宽度和开关阈值上方的幅度,我们已经观察到设备切换到亚稳态状态。

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