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Circuit-level Design and Evaluation of STT-MRAM based Binary Winner-Takes-All Network for Image Recognition

机译:基于STT-MRAM的二进制优胜者通吃全图像识别电路的电路级设计和评估

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Recently it has been demonstrated that binary neural network (BNNs) can achieve satisfying accuracy on various databases with the significant reduction of computation and memory resources [1], which provides a promising way for on-chip implementation of deep neural networks (DNNs). To storage synaptic weights, the SRAM is traditionally utilized in the CMOS based ASIC designs for hardware acceleration implementation of DNNs. However, it has been proved to be extremely area- and power-inefficiency due to its large cell area ( >200 F2) and volatility, respectively. To overcome these issues, the emerging non-volatile spin transfer torque magnetoresistive RAM (STT-MRAM) with small cell area (<; 10 F2) recently has been proposed to implement synaptic weights instead of SRAM [2]. Moreover, STT-MRAM has been demonstrated at Gb chip-level by industry [3]. In this paper, a single-layer binary perceptron (BP) is proposed for image recognition, which can be implemented via the pseudo-crossbar array of 1T-1MTJ (STT-MRAM cell) as shown in Fig. 1(a). With the learning rule in [1], such BP was trained in an off-line manner on a set of N = 30 patterns, including three stylized letters (`z', `v', `n') as shown in Fig. 1(b) [4], which also was used for testing. To classify these three stylized letters, we design a winner-takes-all (WTA) circuit as shown in Fig. 1(c), which is used as the peripheral inference circuit of proposed BP. Based on a physics-based STT-MTJ compact model and a commercial CMOS 40 nm design kit, the functionality of the proposed BP and WTA circuit have been demonstrated as shown in Fig. 2(a). Additionally, we also investigate the impact of TMR and device variations on the recognition rate as shown in Fig. 2(b)and Fig. 2(c), respectively. In summary, a STT-MRAM based binary synaptic array with a WTA circuit has been proposed for image recognition, which provides a promising solution for hardware implementation of BNNs on-chip.
机译:最近已经证明,二进制神经网络(BNN)可以在各种数据库上达到令人满意的精度,而显着减少了计算和内存资源[1],这为片上实现深度神经网络(DNN)提供了一种有希望的方法。为了存储突触权重,传统上将SRAM用于基于CMOS的ASIC设计中,以实现DNN的硬件加速。但是,由于其较大的单元面积(> 200 F,已被证明具有极低的面积和功率效率) 2 )和波动率。为了克服这些问题,新兴的非易失性自旋转移扭矩磁阻RAM(STT-MRAM)具有较小的单元面积(<; 10 F 2 )最近已提出代替SRAM [2]来实现突触权重。此外,业界已经在Gb芯片级上演示了STT-MRAM [3]。在本文中,提出了一种用于图像识别的单层二进制感知器(BP),可以通过1T-1MTJ(STT-MRAM单元)的伪交叉开关阵列实现,如图1(a)所示。利用[1]中的学习规则,以离线方式在一组N = 30个模式上训练了这种BP,该模式包括三个风格化的字母(“ z”,“ v”,“ n”),如图2所示。 1(b)[4],也用于测试。为了对这三个风格化的字母进行分类,我们设计了如图1(c)所示的赢家通吃(WTA)电路,该电路用作所提出的BP的外围推理电路。基于基于物理学的STT-MTJ紧凑模型和商用CMOS 40 nm设计套件,已证明了所提出的BP和WTA电路的功能,如图2(a)所示。此外,我们还分别研究了TMR和设备变化对识别率的影响,如图2(b)和图2(c)所示。总之,已经提出了具有WTA电路的基于STT-MRAM的二进制突触阵列用于图像识别,这为片上BNN的硬件实现提供了有希望的解决方案。

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