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Circuit-level Design and Evaluation of STT-MRAM based Binary Winner-Takes-All Network for Image Recognition

机译:基于STT-MRAM的二进制赢家的电路级设计与评估图像识别

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Recently it has been demonstrated that binary neural network (BNNs) can achieve satisfying accuracy on various databases with the significant reduction of computation and memory resources [1], which provides a promising way for on-chip implementation of deep neural networks (DNNs). To storage synaptic weights, the SRAM is traditionally utilized in the CMOS based ASIC designs for hardware acceleration implementation of DNNs. However, it has been proved to be extremely area- and power-inefficiency due to its large cell area ( >200 F2) and volatility, respectively. To overcome these issues, the emerging non-volatile spin transfer torque magnetoresistive RAM (STT-MRAM) with small cell area (<; 10 F2) recently has been proposed to implement synaptic weights instead of SRAM [2]. Moreover, STT-MRAM has been demonstrated at Gb chip-level by industry [3]. In this paper, a single-layer binary perceptron (BP) is proposed for image recognition, which can be implemented via the pseudo-crossbar array of 1T-1MTJ (STT-MRAM cell) as shown in Fig. 1(a). With the learning rule in [1], such BP was trained in an off-line manner on a set of N = 30 patterns, including three stylized letters (`z', `v', `n') as shown in Fig. 1(b) [4], which also was used for testing. To classify these three stylized letters, we design a winner-takes-all (WTA) circuit as shown in Fig. 1(c), which is used as the peripheral inference circuit of proposed BP. Based on a physics-based STT-MTJ compact model and a commercial CMOS 40 nm design kit, the functionality of the proposed BP and WTA circuit have been demonstrated as shown in Fig. 2(a). Additionally, we also investigate the impact of TMR and device variations on the recognition rate as shown in Fig. 2(b)and Fig. 2(c), respectively. In summary, a STT-MRAM based binary synaptic array with a WTA circuit has been proposed for image recognition, which provides a promising solution for hardware implementation of BNNs on-chip.
机译:最近,已经证明了二元神经网络(BNN)可以实现各种数据库的满足准确性,以实现计算和存储器资源的显着降低[1],这为深神经网络(DNN)的片上实现提供了有希望的方式。为了存储突触权重,SRAM传统上用于基于CMOS的ASIC设计,用于DNN的硬件加速度。然而,由于其大细胞区域(> 200 f),已被证明是极其区域和效率低下 2 分别和波动性分别。为了克服这些问题,具有小细胞面积的新出现的非易失性自旋转移扭矩磁阻Ram(STT-MRAM)(<; 10 f 2 )最近已提议实施突触权重而不是SRAM [2]。此外,STT-MRAM通过工业的GB芯片水平证明了STT-MRAM [3]。在本文中,提出了一种用于图像识别的单层二进制Perceptron(BP),其可以通过如图1t-1mtj(stt-mram小区)的伪横梁阵列来实现,如图2所示。1(a)。利用[1]中的学习规则,在一组n = 30模式上以离线方式训练这种BP,包括三个程式化的字母(`z',`v',`n')。 1(b)[4],其也用于测试。为了对这三个程式化的字母进行分类,我们设计了一种如图1(c)所示的获胜者 - 所有(WTA)电路,用作所提出的BP的外围推导电路。基于基于物理的STT-MTJ紧凑型模型和商业CMOS 40nm设计套件,已经证明了所提出的BP和WTA电路的功能,如图2所示。2(a)。另外,我们还研究了如图2(b)所示的识别率对TMR和器件变化对识别率的影响。图2(b)和图2(c)。总之,已经提出了具有WTA电路的基于STT-MRAM的二进制突触阵列,用于图像识别,这为芯片上的BNNS的硬件实现提供了有希望的解决方案。

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