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Active-Switched-Capacitor Based Diode Assisted and Capacitor Assisted Extended Switched Boost-Z-Source Inverters

机译:基于有源开关电容的二极管辅助和电容辅助扩展开关升压Z源逆变器

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This paper presents two novel topologies of active switched-capacitor based diode assisted and capacitor assisted extended single-phase Z-source inverter (ZSI) for high voltage gain. The boost factor of the classical ZSI/quasi-ZSI is limited because of the operating condition that summation of modulation index (M) and shoot-through duty cycle (D) is less than or equal to unity for simple boost control. Thus, to achieve higher voltage boost, a high value of D is required which leads to the lower operating value of M. Lower operating value of M leads to poor inversion operation at the fundamental power frequency with more total harmonic distortions, and finally, the performance of ac output gets degraded. The proposed topologies achieve high voltage gain with low D and give better inversion operation as compared to the existing high voltage gain inverters which are suitable for DC microgrid applications. The steady-state analysis of proposed inverters are discussed and verified with the simulation and experimental results.
机译:本文提出了两种新颖的拓扑结构,分别是基于有源开关电容器的二极管辅助和电容器辅助的扩展单相Z源逆变器(ZSI),以实现高电压增益。传统的ZSI /准ZSI的升压因子受到限制,因为操作条件为简单的升压控制,调制指数(M)和直通占空比(D)的总和小于或等于1。因此,为了获得更高的升压效果,需要较高的D值,这将导致M的较低工作值。较低的M值将导致在基本功率频率下逆变性能较差,总谐波失真更高,最后,交流输出性能下降。与适用于DC微电网应用的现有高电压增益逆变器相比,所提出的拓扑结构具有低D值的高电压增益,并提供了更好的逆变操作。对所提出的逆变器的稳态分析进行了讨论,并通过仿真和实验结果进行了验证。

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