The electrical effect on Schottky barrier diodes of emitted hydrogen from dielectric films

摘要

Hydrogen, emitted from dielectric films during annealing, could change electrical characteristics of devices. It is important to understand each phenomena quantitatively for setting up a robust manufacturing process. This paper is focusing on the effect of hydrogen on forward voltage of Schottky barrier diode (SBD), and is also explaining the importance of controlling the amount of hydrogen, emitted from dielectric films, to obtain satisfactory characteristics.