Piezoelectric Field-Effect Transistors with Sub-Thermal Swing

摘要

The sub-thermal swing characteristic in piezoelectric FETs is theoretically investigated. Analytical models are utilized to explore the gate voltage (V_G) modulated strain, conduction band edge shift ΔE_o and SS. The previously neglected impact of strain induced metal work function (Φ_M) and effective masses modulation is thoroughly discussed. And the impact of crystal orientation on strain induced SS performance enhancement in III-V materials is considered, demonstrating that the [111] is the best to obtain the larger stress and ΔE_o. A new device structure, Piezo-PillarFET was proposed to achieve the minimum SS for a given material system.