Scaling NC-FinFET to Sub-3 nm Nodes

摘要

Scaling the ferroelectric thickness to around 1 nm is essential for its introduction in replacement metal gate process. Negative capacitance FinFET should be optimized for ultra-thin ferroelectrics. In this work, we optimize NC-FinFET for sub-5 nm nodes considering 1 nm thick ferroelectric layer. We show that the fin width of the NC-FinFET can be relaxed by ~1.5X for the same short-channel performance. We explore the design space for a 1 nm ferroelectric film and show that the film with remnant polarization of ~10 μC/cm² and coercive field of ~1.5 - 2 MV/cm will be required to achieve the target performance for 3 nm node.