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A new sharp switch device integrated in 28 nm FD-SOI technology

机译：集成了28 nm FD-SOI技术的新型锋利开关设备

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摘要

A novel 2-components sharp switch device integrated in high-k metal gate UTBB 28 nm FD-SOI technology is presented, analyzed and measured in DC. It features a subthreshold slope of 2 mV/decade and offers several parameters to tune its characteristic, for ESD or neuromorphic applications.

机译：提出了一种在高k金属栅极UTBB 28 nm FD-SOI技术中集成的新型2组件尖锐开关器件，并在直流中对其进行了分析和测量。它具有2 mV /十倍的亚阈值斜率，并提供了多个参数来调节其特性，适用于ESD或神经形态应用。

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《SOI-3D-Subthreshold Microelectronics Technology Unified Conference 》|2018年|1-3|共3页
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Thomas Bédécarrats; Claire Fenouillet-Béranger; Sorin Cristoloveanu; Philippe Galy;
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关键词
BiCMOS integrated circuits; Switches; MOS devices; Logic gates; Ions; Threshold voltage; Temperature measurement;

机译：BiCMOS集成电路开关MOS器件逻辑门离子阈值电压温度测量;

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专利

1. A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI ? [J] . Matthew Turnquist, Markus Hiienkari, Jani M?kip??, Journal of Low Power Electronics and Applications . 2016 ,第3期

机译：采用28 nm UTBB FD-SOI的全集成式2：1自振荡开关电容DC-DC转换器？
2. Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology [J] . Athanasiou Sotirios, Legrand Charles-Alexandre, Cristoloveanu Sorin, Solid-State Electronics . 2017 ,第FEBa期

机译：可重新配置的超薄膜GDNMOS器件，用于28 nm FD-SOI技术中的ESD保护
3. A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application [J] . Bedecarrats Thomas, Fenouillet-Beranger Claire, Cristoloveanu Sorin, Solid-State Electronics . 2020 ,第Juna期

机译：基于BIMOS的2T1C模拟尖刺神经元电路集成在28 nm FD-SOI技术中，用于神经形态应用
4. A new sharp switch device integrated in 28 nm FD-SOI technology [C] . Thomas Bédécarrats, Claire Fenouillet-Béranger, Sorin Cristoloveanu, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference . 2018

机译：一种新的夏普开关装置，集成在28 NM FD-SOI技术中
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI [O] . Man-Chia Chen, Aldo Peña Perez, Sri-Rajasekhar Kothapalli, -1

机译：像素间距匹配的超声接收器用于在28nm UTBB FD-SOI中集成Delta-Sigma波束形成器的3D光声成像
7. A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI [O] . Matthew Turnquist, Markus Hiienkari, Jani Mäkipää, 2016

机译：采用28 nm UTBB FD-sOI的全集成2：1自振荡开关电容DC-DC转换器

A new sharp switch device integrated in 28 nm FD-SOI technology

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